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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors * 2SB827 DESCRIPTION With TO-3PN package Complement to type 2SD1063 Wide area of safe operation Low collector-emitter saturation voltage : VCE(sat)=(-)0.4V max. APPLICATIONS Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-3PN) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -60 -50 -6 -7 -14 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 60 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1mA ;RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -50 -60 -6 TYP. 2SB827 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V V V -0.4 -0.1 -0.1 280 V mA mA Switching times ton tstg tf Transition frequency Turn-on time Storage time Fall time ANG INCH R 100-200 S 140-280 EMIC ES DUC ON 10 TOR MHz 0.20 0.70 0.10 |I |I s s |I s IC=-2.0A; IB1=-IB2=-0.2A VCC=-20V;RL=10| hFE-1 Classifications Q 70-140 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB827 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB827 SEM GE HAN INC OND IC TOR UC 4 |
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